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7MBR10SA120
IGBT MODULE (S series) 1200V / 10A / PIM
IGBT Modules
Features
* Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 20 15 10 30 20 10 75 1200 20 15 10 30 20 75 1200 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V N*m
Continuous
Tc=25C Tc=80C Tc=25C Tc=80C
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake
1 device
Continuous 1ms 1 device
Tc=25C Tc=80C Tc=25C Tc=80C
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=10A VGE=15V RG=120 IF=10A chip terminal Min.
7MBR10SA120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1200 0.35 0.25 0.1 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=10A, VGE=15V chip terminal VCC=600V IC=10A VGE=15V RG=120 VR=1200V IF=10A chip terminal VR=1600V T=25C T=100C T=25/50C
2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
Converter
mA V mA K
Thermistor
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.67 2.78 1.67 1.85 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ]
[T h e rm is to r]
8
2 0 (G u) 1 8 (G v) 1 6 (G w )
9
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
25
7MBR10SA120
[ Inverter ] Collector current vs. Collector-Emitter voltage
25
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 20
15V 12V 20
15V VGE= 20V 12V
Collector current : Ic [ A ]
15 10V 10
Collector current : Ic [ A ]
15 10V
10
5
5 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
25 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 20
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
15
6
10
4 Ic= 20A 2 Ic= 10A Ic= 5A
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
5000
[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25 C
1000 25
o
VGE=0V, f= 1MHz, Tj= 25 C
o
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
1000
Cies
600
15
500
400
10
200
5
100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100
IGBT Modules
7MBR10SA120
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120, Tj=25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=120, Tj=125C
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton
tr
tr
tf 100
100 tf
50 0 5 10 Collector current : Ic [ A ] 15 20
50 0 5 10 Collector current : Ic [ A ] 15 20
[ Inverter ] Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=15V, Tj=25C
5000 3
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120
ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125 C)
o
1000
2
500
Eon(25 C)
o
Eoff(125 C) 1 Eoff(25 C) Err(125 C)
o o
o
100
tf
Err(25 C)
o
50 50 100 500 Gate resistance : Rg [
]
0 1000 2000 0 5 10 Collector current : Ic [ A ] 15 20
[ Inverter ] Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=10A, VGE=15V, Tj=125C
8 25
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<15V, Rg>120, Tj<125C = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 6 Collector current : Ic [ A ] Eoff Err 0 50 100 500 Gate resistance : Rg [
]
20
15
4
10
2 5
0 1000 2000 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR10SA120
[ Inverter ] Forward current vs. Forward on voltage (typ.)
25 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=120
Tj=125 C 20
o
Tj=25 C 100
o
trr(125 C)
o
Reverse recovery time : trr [ nsec ]
trr(25 C) 50
o
15
Reverse recovery current : Irr [ A ]
Forward current : IF [ A ]
10
10
Irr(125 C)
o
Irr(25 C)
o
5
0 0 1 2 Forward on voltage : VF [ V ] 3 4
1 0 5 10 Forward current : IF [ A ] 15 20
[ Converter ] Forward current vs. Forward on voltage (typ.)
25
Tj= 25 C 20
o
Tj= 125 C
o
Forward current : IF [ A ]
15
10
5
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
10 200 100
[ Thermistor ] Temperature characteristic (typ.)
FWD[Inverter] Thermal resistanse : Rth(j-c) [ C/W ] Conv. Diode Resistance : R [ k ] 1 IGBT [Inverter,Brake] 10
o
1
1
0.1
0.1 0.001 0.01 0.1 -60 -40 -20 0 20 40 60 80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
IGBT Modules
7MBR10SA120
[ Brake ] Collector current vs. Collector-Emitter voltage
25
[ Brake ] Collector current vs. Collector-Emitter voltage
25
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 20
15V 12V 20
VGE= 20V
15V
12V
Collector current : Ic [ A ]
15 10V 10
Collector current : Ic [ A ]
15 10V
10
5
5 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
25 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 20
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
15
6
10
4 Ic= 20A 2 Ic= 10A Ic= 5A
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
5000 1000
o
[ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25 C
25
o
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
1000
Cies
600
15
500
400
10
200
5
100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100
IGBT Modules
Outline Drawings, mm
7MBR10SA120

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